A phototransistor is known as a device in which turns light source energy into electric energy. Phototransistors are very close to photoresistors but produce both current and voltage, while photoresistors simply produce current. The reason is a phototransistor includes a bipolar semiconductor and targets the energy this can be transmitted via it.
Phototransistors are light-sensitive transistors. A common type of phototransistor resembles a bipolar transistor with its base lead removed and replaced with a light-sensitive area. This is why a phototransistor has only 2 terminals instead of the usual 3. However, when the light-sensitive region is exposed to light, a small base current is generated that controls a much larger collector-to-emitter current.
Token (Bullet Shape 940) with environmentally friendly photosensitive sensor, control sensitivity under low illumination, stable current signal output under strong light source. Multiple light at the same time can be used to ensure consistent photosensitive effect, not false trigger. Meet the latest environmental requirements of toys. Applicable to all kinds of light control lighting products (such as night lights, lawn lamps, solar lights, etc.), automatically adjust the background light (such as LCD, mobile phones, cameras, computer cameras, security monitoring machines, etc.).
The (Bullet Shape 940) ambient light sensors, commonly used in infrared reception, Ultra-thin multi-point infrared touch screen, and all kinds of high-light or visible light interference strong products, such as various types of infrared light control, infrared on the radio, infrared reflection and other electronic products.
For the convenience of installation in all kinds of products in any position, different sizes are available upon request. So that product consistency is better, more market competitiveness. It is also achievable to provide the bright current / dark current (bright resistance / dark resistance) for the most suitable product.
Download complete specification Infrared Ambient Light Sensors / RoHS Phototransistor (Bullet Shape 940) PDF.
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Part NO. | A (mm) | B (mm) | C (mm) | D (mm) | E (mm) | F (mm) | G (mm) | H (mm) | I (mm) | |
PT-A2-DC-3-BE-940 | 4.05 ± 0.20 | 3.00 ± 0.20 | 1.50 Max. | 1.50 ± 0.5 | 2.54 ± 0.20 | 5.30 ± 0.20 | 1.00 ± 0.20 | 14.0 Min. | 0.50 ± 0.20 | |
PT-A1-FC-5-BE-940 | 5.80 ± 0.20 | 5.00 ± 0.20 | 1.50 Max. | 1.50 ± 0.5 | 2.54 ± 0.20 | 8.70 ± 0.20 | 1.00 ± 0.20 | 25.4 Min. | 0.50 ± 0.20 |
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Part NO. | A (mm) | B (mm) | C (mm) | D (mm) | E (mm) | F (mm) | G (mm) | H (mm) | ||
PT-A1-DC-5-BN-940 | 4.80 ± 0.20 | 4.80 ± 0.20 | 1.50 Max. | 2.00 ± 0.5 | 2.54 ± 0.20 | 8.60 ± 0.20 | 14.00 Min. | 0.50 ± 0.20 |
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Peak Wavelength | λp | \ | - | 940 | - | nm |
Spectral Response Bandwidth | λ | \ | 700 | - | 1100 | nm |
Collector-Emitter Breakdown Voltage | Bvceo | Ice=100µA Ee=0mW/cm2 |
30 | - | - | V |
Emitter-Base Breakdown Voltage | Bveco | Ice=100µA Ee=0mW/cm2 |
6 | - | - | V |
Collector-Emitter Saturation Voltage | Vce (sat) |
Ice=2mA Ee=1mW/cm2 |
- | - | 0.4 | V |
Collector-Emitter Current | Ice | Vce=5V Ee=1mW/cm2 |
0.5 | 0.8 | 1.2 | mA |
Collector Dark Current | Iceo | Vce=5V Ev=0Lux |
- | - | 0.1 | μA |
Rise Time | tr | Vcc=5V Ice=1mA RL=1000Ω |
15 | μs | ||
Fall Time | tf | 15 |
Parameter | Symbol | Value | Unit |
Collector-Emitter Voltage | VCEO | 30 | V |
Emitter-Collector-Voltage | VECO | 6 | V |
Power Dissipation | PC | 70 | mW |
Operating Temperature Range | Topr | -25 ~ +85 | °C |
Storage Temperature | Tstg | -40 ~ +100 | °C |
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Peak Wavelength | λp | \ | - | 940 | - | nm |
Spectral Response Bandwidth | λ | \ | 860 | - | 1100 | nm |
Collector-Emitter Breakdown Voltage | Bvceo | Ice=100µA Ee=0mW/cm2 |
30 | - | - | V |
Emitter-Base Breakdown Voltage | Bveco | Ice=100µA Ee=0mW/cm2 |
3 | - | - | V |
Collector-Emitter Saturation Voltage | Vce (sat) |
Ice=2mA Ee=1mW/cm2 |
- | - | 0.4 | V |
Collector-Emitter Current | Ice | Vce=5V Ee=1mW/cm2 |
1.0 | 1.6 | 2.4 | mA |
Collector Dark Current | Iceo | Vce=5V Ev=0Lux |
- | - | 0.1 | μA |
Rise Time | tr | Vcc=5V Ice=1mA RL=1000Ω |
15 | μs | ||
Fall Time | tf | 15 |
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Peak Wavelength | λp | \ | - | 940 | - | nm |
Spectral Response Bandwidth | λ | \ | 700 | - | 1100 | nm |
Collector-Emitter Breakdown Voltage | Bvceo | Ice=100µA Ee=0mW/cm2 |
30 | - | - | V |
Emitter-Base Breakdown Voltage | Bveco | Ice=100µA Ee=0mW/cm2 |
3 | - | - | V |
Collector-Emitter Saturation Voltage | Vce (sat) |
Ice=2mA Ee=1mW/cm2 |
- | - | 0.4 | V |
Collector-Emitter Current | Ice | Vce=5V Ee=1mW/cm2 |
1.0 | 1.6 | 2.4 | mA |
Collector Dark Current | Iceo | Vce=5V Ev=0Lux |
- | - | 0.1 | μA |
Rise Time | tr | Vcc=5V Ice=1mA RL=1000Ω |
15 | μs | ||
Fall Time | tf | 15 |
Parameter | Symbol | Value | Unit |
Collector-Emitter Voltage | VCEO | 30 | V |
Emitter-Collector-Voltage | VECO | 3 | V |
Power Dissipation | PC | 70 | mW |
Operating Temperature Range | Topr | -25 ~ +85 | °C |
Storage Temperature | Tstg | -40 ~ +100 | °C |
Lead-forming and cuttings:
Storage:
The sensor is incorporated in the transparent resin package. Because of its sensitivity to humidity, the package is moisture-proof. When storing the sensor, do as instructed below.
Mounting:
Soldering:
Cleaning:
PT | - | A2 | - | AC | - | 3 | - | BE | - | 940 | |||||||||||||||||||||||||||||
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